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參數(shù)資料
| 型號： | KSE44H |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | General Purpose Power Switching Applications |
| 中文描述： | 通用電源轉換應用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | KSE44H |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
: KSE44H 1,2
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
V
CE
(sat)
: KSE44H 2, 5, 8,11
V
BE
(sat)
*Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
t
ON
Turn ON Time
t
STG
Storage Time
t
F
Fall Time
* Pulse test: PW
≤
300
μ
s, Duty cycle
≤
2%
Parameter
Value
30
45
60
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°
C
°
C
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
Test Condition
V
CE
= Rated V
CEO
, V
EB
= 0
V
EB
= 5V, I
C
= 0
Min.
Typ.
Max.
10
100
Units
μ
A
μ
A
V
CE
= 1V, I
C
= 2A
35
60
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
I
C
= 8A, I
B
= 0.8A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
V
CB
= 10V, f = 1MHz
V
CC
=20V, I
C
= 5A
I
B1
= - I
B2
= 0.5A
1
1
1.5
V
V
V
50
130
300
500
140
MHz
pF
ns
ns
ns
KSE44H Series
General Purpose Power Switching Applications
Low Collector-Emitter Saturation Voltage : V
CE
(sat) = 1V (Max.) @ 8A
Fast Switching Speeds
Complement to KSE45H
1.Base 2.Collector 3.Emitter
1
TO-220
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| KSH112 | D-PAK for Surface Mount Applications |
| KSH112-I | D-PAK for Surface Mount Applications |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KSE44H11 | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE44H11TU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE44H11TU | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| KSE45H | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Power Switching Applications |
| KSE45H1 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Power Switching Applications |
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