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參數(shù)資料
| 型號： | KSE182 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low Power Audio Amplifier Low Current High Speed Switching Applications |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | KSE182 |
2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage : KSE180
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector -Emitter Breakdown Voltage
Parameter
Value
60
80
100
40
60
80
7
3
6
1
1.5
12.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
: KSE181
: KSE182
V
CEO
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25
°
C)
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSE180
: KSE181
: KSE182
I
C
= 10mA, I
B
= 0
V
CB
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CB
= 60V, I
E
= 0 @ T
C
= 150
°
C
V
CB
= 80V, I
E
= 0 @ T
C
= 150
°
C
V
CB
= 100V, I
E
= 0 @ T
C
= 150
°
C
V
BE
= 7V, I
C
= 0
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 1.5A
I
C
= 500mA, I
B
= 50mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 10V, I
E
= 0, f = 0.1MHz
40
60
80
V
V
V
μ
A
μ
A
μ
A
mA
mA
mA
μ
A
I
CBO
Collector Cut-off Current
: KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
0.1
0.1
0.1
0.1
0.1
0.1
0.1
250
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
50
30
12
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.3
0.9
1.7
1.5
2.0
1.2
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
50
MHz
pF
30
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
1
1. Emitter 2.Collector 3.Base
TO-126
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PDF描述 |
|---|---|
| KSE200 | Feature |
| KSE210 | Feature |
| KSE2955 | General Purpose and Switching Applications |
| KSE2955T | General Purpose and Switching Applications |
| KSE3055T | General Purpose and Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSE182STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE200 | 制造商:Molex 功能描述:KIT EUROSTYLE 5.08MM K-ESE200 |
| KSE200STSTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil Short Leads RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE210 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Feature |
| KSE210STU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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