- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373183 > KSD1417 (FAIRCHILD SEMICONDUCTOR CORP) High Power Switching Applications PDF資料下載
參數(shù)資料
| 型號： | KSD1417 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Power Switching Applications |
| 中文描述： | 7 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | KSD1417 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
Parameter
Value
60
60
5
7
10
0.7
2
30
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
I
C
= 50mA, I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 7A
I
C
= 3A, I
B
= 6mA
I
C
= 7A, I
B
= 14mA
I
C
= 3A, I
B
= 6mA
V
CC
= 45V, I
C
= 4.5A
I
B1
= -I
B2
= 6mA
R
L
= 10
Min.
60
Typ.
Max.
Units
V
μ
A
mA
100
3
15K
DC Current Gain
2K
1K
0.9
1.2
1.5
0.8
3
2.5
1.5
2
2.5
V
V
V
μ
s
μ
s
μ
s
V
BE
(sat)
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
KSD1417
High Power Switching Applications
High DC Current Gain
Low Collector-Emitter Saturation Voltage
Complement to KSB1022
1
1.Base 2.Collector 3.Emitter
TO-220F
相關PDF資料 |
PDF描述 |
|---|---|
| KSD1588 | LOW FREQUENCY POWER AMPLIFIER |
| KSD1589 | LOW FREQUENCY POWER AMPLIFIER |
| KSD1621 | High Current Driver Applications |
| KSD1691 | Feature |
| KSD1943 | High Power Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KSD1417TU | 功能描述:達林頓晶體管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSD1420 | 制造商:Ssac 功能描述: |
| KSD1501LFT | 制造商:C & K 功能描述:Square green LED illum tactile switch |
| KSD1588 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Frequency Power Amplifier |
| KSD1588OTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。