參數(shù)資料
型號(hào): KSC5030F
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage and High Reliability
中文描述: 6 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: TO-3PF, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 64K
代理商: KSC5030F
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
K
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector Cut-off Current
BV
CEO
Collector Cut-off Current
BV
EBO
Emitter Cut-off Current
V
CEX
(sus)
DC Current Gain
h
FE
Classification
Classification
Parameter
Value
1100
800
7
6
20
3
60
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 1mA, I
E
= 0, V
BE
=0
I
C
= 5mA, R
BE
=
I
E
= 1mA, I
C
= 0
I
C
= 3A, I
B1
= -I
B2
= 0.6A
L = 1mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.4A
V
CE
= 5V, I
C
= 2A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.4A
V
CC
= 400V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 100
Min.
1100
800
7
800
Typ.
Max.
Units
V
V
V
V
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
10
10
40
μ
A
μ
A
10
8
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
2
1.5
V
V
pF
MHz
μ
s
μ
s
μ
s
120
15
0.5
3
0.3
R
O
Y
h
FE1
10 ~ 20
15 ~ 30
20 ~ 40
KSC5030F
High Voltage and High Reliability
High Speed Switching
Wide SOA
TO-3PF
1.Base 2.Collector 3.Emitter
1
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