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參數(shù)資料
| 型號： | KSC2881 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power Amplifier |
| 中文描述： | 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | KSC2881 |
2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
* Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
120
120
5
800
160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
°
C
°
C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Test Condition
I
C
=10
μ
A, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=5V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
120
5
Typ.
Max.
Units
V
V
nA
nA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
100
100
240
1.0
1.0
80
V
V
120
MHz
pF
30
Classification
h
FE
O
Y
80 ~ 160
120 ~ 240
KSC2881
Power Amplifier
Collector-Emitter Voltage : V
CEO
=120V
Current Gain Bandwidth Productor : f
T
=120MHz
Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
Complement to KSA1201
SCX
Marking
h
FE
grade
1. Base 2. Collector 3. Emitter
SOT-89
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KSC2881_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| KSC2881OTF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC2881OTF_Q | 功能描述:兩極晶體管 - BJT NPN Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC2881YTF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC2883 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
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