參數(shù)資料
型號: KSC1173
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: Low Frequency Power Amplifier Power Regulator
中文描述: 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 64K
代理商: KSC1173
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
BV
CBO
Collector-Base Voltage
BV
CEO
Collector-Emitter Voltage
BV
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(on)
Base-Emitter ON Voltage
f
T
Current Gain Base Width Product
C
ob
Output Capacitance
h
FE
Classification
Parameter
Value
30
30
5
3
10
150
- 55 ~ 150
Units
V
V
V
A
W
°
C
°
C
Test Condition
I
C
= 500
μ
A, I
E
= 0
I
C
= 10mA I
B
= 0
I
E
= -1mA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
I
C
= 2A, I
B
= 0.2A
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 0.5A
V
CB
= 10V, I
E
=0,
f = 1MHz
Min.
30
30
5
Typ.
Max.
Units
V
V
1.0
1.0
240
μ
A
μ
A
DC Current Gain
70
25
0.3
0.75
100
35
0.8
1.0
V
V
MHz
pF
Classification
h
FE1
O
Y
70 ~ 140
120 ~ 240
KSC1173
Low Frequency Power Amplifier
Power Regulator
Collector Current : I
C
=3A
Collector Dissipation : P
C
=10W (T
C
=25
°
C)
Complement to KSA473
1.Base 2.Collector 3.Emitter
1
TO-220
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