參數(shù)資料
型號(hào): KSB601
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: LOW FREQUENCY POWER AMPLIFIER
中文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
封裝: TO-220, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 48K
代理商: KSB601
2000 Fairchild Semiconductor International
K
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Figure 5. Reverse Bias Safe Operating Areas
Figure 6. Derating Curve of Safe Operating Areas
-0
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
I
B
= -1.0mA
I
B
= -6mA
I
B
= -4mA
I
B
= -0.8mA
I
B
= -1.5mA
I
B
= -0.6mA
I
B
=-2mA
I
B
= -10mA
I
B
= -0.4mA
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
10
100
1000
10000
V
CE
= -2V
h
F
,
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.1
-1
-10
V
CE
(sat)
V
BE
(sat)
I
C
= 1000 I
B
V
C
(
B
(
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-0.001
-0.01
-0.1
-1
-10
100ms
10ms
1m
100us
30s
50us
sbLme
Dsspaton
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-20
-40
-60
-80
-100
-120
-140
-160
-0
-2
-4
-6
-8
-10
-12
-14
-16
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
DsspaionLmted
s/bLmted
d
T
C
[
o
C], CASE TEMPERATURE
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參數(shù)描述
KSB601O 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Frequency Power Amplifier
KSB601OTU 功能描述:達(dá)林頓晶體管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
KSB601R 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Frequency Power Amplifier
KSB601Y 功能描述:達(dá)林頓晶體管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
KSB601YTSTU 功能描述:達(dá)林頓晶體管 PNP Epitaxial Sil Darl; Short Leads RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel