參數(shù)資料
型號: KS86C4302
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CAP 100PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
中文描述: SAM87Ri家庭的8位單芯片CMOS微控制器提供了快速,高效的CPU,一個廣泛的集成外設,各種面具,公關
文件頁數(shù): 13/34頁
文件大?。?/td> 208K
代理商: KS86C4302
KS86C4302/C4304/P4304
ELECTRICAL DATA
14-3
Table 14-2. DC Electrical Characteristics (Continued)
(T
A
= – 40
°
C to + 85
°
C, V
DD
= 3.0 V to 5.5 V)
Parameter
Symbol
I
LIH1
Conditions
Min
Typ
Max
Unit
Input high leakage
current
All inputs except I
LIH2
V
IN
= V
DD
1
uA
I
LIH2
I
LIL1
X
IN
,
X
OUT
V
IN
= V
DD
V
IN
= 0 V
20
Input low leakage
current
All inputs except
I
LIL2
and
RESET
X
IN
, X
OUT
All outputs
-1
uA
I
LIL2
I
LOH
V
IN
= 0 V
V
OUT
= V
DD
-20
Output high
leakage current
2
uA
Output low
leakage current
I
LOL
All outputs
V
OUT
= 0 V
-2
uA
Pull-up resistors
R
P
V
IN
= 0 V
Ports 0-2
V
DD
= 5 V
30
47
70
k
V
DD
= 5 V
100
200
350
Supply current
I
DD1
Run mode
16 MHz CPU clock
V
DD
= 5V
±
10%
11
20
mA
8 MHz CPU clock
V
DD
= 3.3 V
3
6
I
DD2
Idle mode
16 MHz CPU clock
V
DD
= 5V
±
10%
5
8
8 MHz CPU clock
V
DD
= 3.3 V
0.7
2.5
I
DD3
Stop mode
V
DD
= 5V
±
10%
V
DD
= 3.3 V
65
100
uA
45
80
NOTE:
D.C electrical values for supply current (I
DD
, to I
DD3
) do not include current drawn through internal pull-up
resisters, output port drive current and ADC module.
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