參數(shù)資料
型號: KRA731E
廠商: KEC Holdings
英文描述: CB 3C 3#16S PIN RECP WALL
中文描述: 外延平面PNP晶體管(開關,接口電路及驅動電路)
文件頁數(shù): 1/4頁
文件大?。?/td> 49K
代理商: KRA731E
2002. 7. 9
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA730E~KRA734E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
+
+
+
+
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
+
+
+
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
P
5
5
1. Q EMITTER
2. Q EMITTER
4. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
3. Q BASE
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25
)
MARK SPEC
R1
C
E
B
Type Name
1
2
3
6
5
4
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage TemperatureRange
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA
-
250
-
MHz
Input Resistor
KRA730E
KRA731E
KRA732E
KRA733E
R
1
-
-
-
-
4.7
10
100
22
-
-
-
-
k
KRA734E
-
47
-
TYPE
KRA730E
KRA731E
KRA732E
KRA733E
KRA734E
MARK
JK
JM
JN
JO
JP
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
2
3
6
5
4
Q2
Marking
* Total Rating.
Note : * Characteristic of transistor only.
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