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參數(shù)資料
| 型號： | KMZ52 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Magnetic Field Sensor |
| 中文描述： | 磁場傳感器 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | KMZ52 |
2000 Jun 09
3
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
QUICK REFERENCE DATA
Notes
1.
The compensation coil generates a field H
comp
= A
comp
×
I
comp
in addition to the external field H
ext
. Sensor output will
become zero if H
ext
= H
comp
.
Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
2.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
12
TYP.
MAX.
UNIT
V
CC
S
bridge supply voltage
sensitivity (uncompensated)
5
16
8
V
V
offset
R
bridge
R
comp
A
comp
offset voltage per supply voltage
bridge resistance
compensation coil resistance
field factor of compensation coil; note 1
1.5
1
100
19
0
2
170
22
+1.5
3
300
25
mV/V
k
R
flip
I
flip
t
flip
resistance of set/reset coil
recommended flipping current for stable operation; note 2
flip pulse duration; note 2
1
±
800
1
2
±
1000
±
1200 mA
3
100
3
μ
s
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
P
tot
T
stg
T
amb
I
comp
I
flip (max)
P
flip (max)
V
isol
bridge supply voltage
total power dissipation
storage temperature
maximum operating temperature
maximum compensation current
maximum flipping current
maximum flipping power dissipation
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
flip coil and compensation coil
65
40
8
130
+150
125
15
1500
50
60
V
mW
°
C
°
C
mA
mA
mW
V
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
terminal resistance from junction to ambient
105
K/W
kA/m
mV/V
A/m
mA
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