參數(shù)資料
型號: KMPC859DSLCZP66A
廠商: Freescale Semiconductor
文件頁數(shù): 6/96頁
文件大?。?/td> 0K
描述: IC MPU POWERQUICC 66MHZ 357PBGA
標準包裝: 2
系列: MPC8xx
處理器類型: 32-位 MPC8xx PowerQUICC
速度: 66MHz
電壓: 1.8V
安裝類型: 表面貼裝
封裝/外殼: 357-BBGA
供應(yīng)商設(shè)備封裝: 357-PBGA(25x25)
包裝: 托盤
MPC866/MPC859 Hardware Specifications, Rev. 2
14
Freescale Semiconductor
Thermal Calculation and Measurement
7.5
Experimental Determination
To determine the junction temperature of the device in the application after prototypes are available, the thermal
characterization parameter (
ΨJT) can be used to determine the junction temperature with a measurement of the
temperature at the top center of the package case using the following equation:
TJ = TT +(ΨJT x PD)
where:
Ψ
JT = thermal characterization parameter
TT = thermocouple temperature on top of package
PD = power dissipation in package
The thermal characterization parameter is measured per JESD51-2 specification published by JEDEC using a 40
gauge type T thermocouple epoxied to the top center of the package case. The thermocouple should be positioned
so that the thermocouple junction rests on the package. A small amount of epoxy is placed over the thermocouple
junction and over about 1 mm of wire extending from the junction. The thermocouple wire is placed flat against the
package case to avoid measurement errors caused by cooling effects of the thermocouple wire.
7.6
References
Semiconductor Equipment and Materials International(415) 964-5111
805 East Middlefield Rd.
Mountain View, CA 94043
MIL-SPEC and EIA/JESD (JEDEC) specifications800-854-7179 or
(Available from Global Engineering Documents)303-397-7956
JEDEC Specifications http://www.jedec.org
1. C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive Engine
Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47-54.
2. B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its
Application in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212-220.
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