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參數(shù)資料
| 型號： | KMM466S424BT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx64 SDRAM SODIMM(4M x 64 動態(tài) RAM模塊) |
| 中文描述： | 4Mx64 SDRAM內(nèi)存的SODIMM（4米× 64動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 124K |
| 代理商： | KMM466S424BT |
144pin SDRAM SODIMM
KMM466S424BT
REV. 7 June '98
Revision History
Revision .3 (March 1998)
Some Parameter values & Chracteristics of comp. level are changed as below :
- Input leakage Currents (Inputs) :
±
5uA to
±
1uA.
Input leakage Currents (I/O) :
±
5uA to
±
1.5uA.
- Cin to be measured at V
DD
= 3.3V, TA = 23
°
C, f = 1MHz, V
REF
=1.4V
±
200 mV.
- AC Operating Condition is changed as defined :
VIH(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
VIL(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
- I
CC3
PS is changed 1mA to 2mA.
- I
CC4
value based on comp. is changed.
Revision .4 (March 1998)
- I
CC2
N, I
CC2
NS, I
CC3
N & I
CC3
NS in comp. level values are changed.
Revision .5 (April 1998)
-. Self refresh current(I
CC6
) is changed.
Revision .7 (June 1998)
-. t
SH
(-10 binning) is revised.
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