參數(shù)資料
型號： KMM374F213CK
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊)
中文描述： 200萬× 72的DRAM內(nèi)存（2Mx72動態(tài)內(nèi)存模塊）
文件頁數(shù)： 3/20頁
文件大?。?/td> 411K
代理商： KMM374F213CK
DRAM MODULE
KMM374F213CK
KMM374F203CK
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle,
t
HPC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
9
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V at pulse width
≤
15ns which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Item
Symbol
Min
3.0
0
2.0
-0.3
*2
Typ
Max
3.6
0
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
3.3
0
-
-
V
CC
+0.3
*1
0.8
V
V
V
V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM374F203CK
Min
KMM374F213CK
Min
-
-
-
-
-
-
-
-
-
-
-45
-5
2.4
-
Unit
Max
810
720
9
810
720
720
630
4.5
810
720
45
5
-
0.4
Max
990
900
9
990
900
810
720
4.5
990
900
45
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-45
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
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