參數(shù)資料
型號： KMM372F803BK
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊)
中文描述： 8米× 72的DRAM內(nèi)存（8Mx72動態(tài)內(nèi)存模塊）
文件頁數(shù)： 4/20頁
文件大?。?/td> 423K
代理商： KMM372F803BK
DRAM MODULE
KMM372F80(8)3BK/BS
CAPACITANCE
(T
A
= 25
°
C, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
Max
20
20
45
20
17
Unit
pF
pF
pF
pF
pF
Input capacitance[A0, B0, A1 - A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
-
-
-
-
-
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
84
128
Max
Min
104
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
OE to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command set-up time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period(4K & 8K)
CAS to W delay time
RAS to W delay time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
CWD
t
RWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
50
18
30
60
20
35
3,4,10
3,4,5,13
3,10,13
3,13
3,13
6,11,13
2
8
8
8
1
30
50
13
36
8
15
10
10
5
5
0
7
30
0
0
-2
0
7
7
13
7
-2
13
8
8
8
1
18
50
18
50
40
60
15
38
10
18
13
10
5
8
0
10
35
0
0
-2
0
10
10
15
10
-2
15
10K
10K
13
13
10K
32
20
10K
40
25
4,13
10,13
13
13
13
13
8
8,13
7
13
9,13
9,13
64
64
33
68
38
82
7
7,13
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
相關(guān)PDF資料
PDF描述
KMM372F803BS 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372F883BK 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372F883BS Film Capacitor; Capacitor Type:Suppression; Capacitor Dielectric Material:Polyester; Capacitance:0.047uF; Capacitance Tolerance:+/- 20%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Package/Case:Radial RoHS Compliant: Yes
KMM372F804BS 8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
KMM372V1600BS 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM372F803BS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372F804BS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
KMM372F883BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372F883BS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372V1600BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
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