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參數(shù)資料
| 型號： | KMM372F3280BK5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| 中文描述： | 32M × 72配置的DRAM內(nèi)存（32M × 72配置動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 449K |
| 代理商： | KMM372F3280BK5 |
DRAM MODULE
KMM372F320(8)0BK4
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are V
ih
/V
il
. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
Measured with a load equivalent to 1 TTL loads and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes tha
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
t
WCS
,
t
RWD
,
t
CWD
,
t
AWD
and
t
CPWD
are not restrictive operat-
ing parameter. They are included in the data sheet as electri-
cal characteristics only. If
t
WCS
≥
t
WCS
(min) the cycle is an
early write cycle and the data out pin will remain high imped-
ance for the duration of the cycle. If
t
RWD
≥
t
RWD
(min),
t
CWD
≥
t
CWD
(min),
t
AWD
≥
t
AWD
(min) and
t
CPWD
≥
t
CPWD
(min).
The cycle is a read-modify-write cycle and the data out will
contain data read from the selected cell. If neither of the
above sets of conditions is satisfied, the condition of data
out(at access time) is indeterminate.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
If RAS goes high before CAS high going, the open circuit
condition of the output is achieved by CAS high going. If CAS
goes high before RAS high going , the open circuit condition
of the output is achieved by RAS going.
t
ASC
≥
6ns.
The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
12.
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11.
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相關(guān)代理商/技術(shù)參數(shù) |
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| KMM372F3280BS1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F3280CS1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F400CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| KMM372F400CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| KMM372F410CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
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