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參數(shù)資料
| 型號： | KMM372E3200BK |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| 中文描述： | 32M × 72配置的DRAM內(nèi)存（32M × 72配置動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 453K |
| 代理商： | KMM372E3200BK |
DRAM MODULE
KMM372E320(8)0BK
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
36
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width
≤
20ns, which is measured at V
SS
.
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
*
I
CC2
I
CC3
*
I
CC4
*
I
CC5
I
CC6
*
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM372E3200BK
Min
KMM372E3280BK
Min
-
-
-
-
-
-
-
-
-
-
-10
-10
2.4
-
Unit
Max
2260
2080
100
2260
2080
2080
1900
30
2260
2080
10
10
-
0.4
Max
1720
1540
100
1720
1540
1900
1720
30
1720
1540
10
10
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-10
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM372F1600BK | 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F213CK | 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V |
| KMM372F213CS | 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V |
| KMM372F1600BS | 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F1680BK | 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM372F1600BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F1600BS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F1680BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F1680BS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F213CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V |
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