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參數(shù)資料
| 型號(hào)： | KMM366S803BTL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx64 SDRAM DIMM(8Mx64 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 8Mx64 SDRAM的內(nèi)存（8Mx64動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 142K |
| 代理商： | KMM366S803BTL |
KMM366S803BTL
REV. 5 June '98
PC66 SDRAM MODULE
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
1. Measured with outputs open.
2. Refresh period is 64ms.
Notes :
3
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-0
Operating current
(One bank active)
I
CC1
Burst length =1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
720
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
8
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
160
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
80
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
16
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
16
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
240
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
160
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
840
mA
1
2
720
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
1,080
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
8
mA
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