
KMA210
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 June 2011
8 of 36
NXP Semiconductors
KMA210
Programmable angle sensor
Table 6
describes the diagnostic behavior and the resulting output voltage depending on
the error case. Furthermore the duration and termination condition to enter and leave the
diagnostic mode are given, respectively.
Table 6.
Diagnostic condition Duration
Low voltage
[1]
Status bit stays set in command register until power-on reset.
[2]
Depending on the diagnostic level setting.
8. Limiting values
Table 7.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DD
supply voltage
V
O
output voltage
V
O(ov)
overvoltage output voltage
[1]
Overvoltage on analog output and supply within the specified operating voltage range.
Minimum V
DD
to
maximum V
DD
normal
operation
All analog circuits are active and the measured angle is
available at the analog output. All parameters are within the
specified limits.
All analog circuits are active and the measured angle is
available at the analog output. Not all parameters are within
the specified limits.
The digital core and the oscillator are active but all other
circuits are in Power-down mode. The output is set to the
lower diagnostic level.
Maximum V
DD
to
V
th(ov)
functional
operation
V
th(ov)
to 16 V
overvoltage
Diagnostic behavior
Analog output
4 %V
DD
Termination condition
functional or normal
operation
functional or normal
operation
1
s < t < 10
s
Overvoltage
1
s < t < 10
s
4 %V
DD
Checksum error
Double-bit error
Magnet-loss
Power-loss
Broken bond wire
n/a
n/a
0.5 ms < t < 6 ms
4 %V
DD
or
96 %V
DD
[2]
magnet present
[1]
2 ms
4 %V
DD
or
96 %V
DD
[2]
power-on reset
0.2 ms < t < 1 ms
4 %V
DD
or
96 %V
DD
[2]
power-on reset
[1]
4 %V
DD
or
96 %V
DD
[2]
power-on reset
[1]
4 %V
DD
or
96 %V
DD
[2]
power-on reset
[1]
Table 5.
Supply voltage
System behavior
…continued
State
Description
Limiting values
Conditions
Min
0.3
0.3
Max
+16
+16
16
Unit
V
V
V
T
amb
< 140
C
at t < 1 h
T
amb
< 70
C
[1]
V
th(ov)
I
r
T
amb
T
amb(pr)
T
stg
Non-volatile memory
t
ret(D)
N
endu(W_ER)
write or erase endurance
reverse current
ambient temperature
programming ambient temperature
storage temperature
-
40
10
40
150
+160
70
+125
mA
C
C
C
data retention time
T
amb
= 50
C
T
amb(pr)
= 70
C
17
100
-
-
year
cycle