參數(shù)資料
型號： KM736V847
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx36-Bit Flow Through No Turnaround SRAM(256Kx36位數(shù)據(jù)流無返回靜態(tài) RAM)
中文描述： 256Kx36位流通過無轉機的SRAM（256Kx36位數(shù)據(jù)流無返回靜態(tài)內存）
文件頁數(shù)： 1/17頁
文件大?。?/td> 282K
代理商： KM736V847
PRELIMINARY
KM736V847
KM718V947
256Kx36 & 512Kx18 Flow-Through N
t
RAM
TM
- 1 -
Rev 0.2
Sep. 1998
Document Title
256Kx36 & 512Kx18-Bit Flow Through N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
Remark
Preliminary
Preliminary
Preliminary
History
1. Initial document.
Modify from ADV to ADV at timing.
Add the Trade Mark( N
t
RAM
TM
)
1. Changed tCD from 8.0ns to 8.5ns at -8
2. Changed tCYC from 13.0ns to 12.0ns at -10
3. Changed DC condition at Icc and parameters
Icc ; from 240mA to 260mA at -10,
I
SB1
; from 10mA to 30mA,
I
SB2
; from 10mA to 30mA.
Draft Date
April. 09. 1998
June. 02. 1998
Sep. 09. 1998
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