- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373162 > KM68V4000C (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM68V4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM（為512k x8位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 174K |
| 代理商： | KM68V4000C |
KM68V4000C, KM68U4000C Family
Preliminary
CMOS SRAM
Revision 0.1
June 1998
5
AC CHARACTERISTICS
(KM68V4000C Family : Vcc=3.0~3.6V, KM68U4000C Family : Vcc=2.7~3.3V
Commercial product :T
A
=0 to 70
°
C, Industrial product : T
A
=-40 to 85
°
C)
Parameter List
Symbol
Speed Bins
Units
70ns
85ns
100ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
t
RC
70
-
85
-
100
-
ns
Address access time
t
AA
-
70
-
85
-
100
ns
Chip select to output
t
CO
-
70
-
85
-
100
ns
Output enable to valid output
t
OE
-
35
-
40
-
50
ns
Chip select to low-Z output
t
LZ
10
-
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
25
0
25
0
30
ns
Output disable to high-Z output
t
OHZ
0
25
0
25
0
30
ns
Output hold from address change
t
OH
10
-
10
-
15
-
ns
Write
Write cycle time
t
WC
70
-
85
-
100
-
ns
Chip select to end of write
t
CW
60
-
70
-
80
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
60
-
70
-
80
-
ns
Write pulse width
t
WP
55
-
55
-
70
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
25
0
25
0
30
ns
Data to write time overlap
t
DW
30
-
35
-
40
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. 70ns product
DATA RETENTION CHARACTERISTICS
Item
1. Industrial product = 20
μ
A
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
≥
Vcc-0.2V
Vcc=3.0V, CS
≥
Vcc-0.2V
2.0
-
3.6
V
Data retention current
I
DR
-
0.5
15
1)
-
μ
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
ms
Recovery time
t
RDR
5
-
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68U512A | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68V512A | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68U512B | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68V512B | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68V1000B | 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM-6LP | 制造商:Cooper Bussmann 功能描述:LOW PROFILE MINI ASSORTME - Bulk 制造商:COOPER INDUSTRIES 功能描述:LOW PROFILE MINI ASSORTME 制造商:COOPER BUSSMANN 功能描述:LOW PROFILE MINI ASSORTME |
| KM6TMS9929 | 制造商:Texas Instruments 功能描述: |
| KM7000KIT | 制造商:COMARK 功能描述:PH METER R |
| KM703N | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
| KM703N-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。