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參數(shù)資料
| 型號(hào)： | KM68U2000A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 130K |
| 代理商： | KM68U2000A |
CMOS SRAM
KM68V2000A, KM68U2000A Family
Revision 0.0
May 1998
Advance
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
Process Technology : TFT
Organization : 256Kx8
Power Supply Voltage
KM68V2000A Family : 3.0V ~ 3.6V
KM68U2000A Family : 2.7V ~ 3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP1-0820F, 32-TSOP1-0813.4F
GENERAL DESCRIPTION
The KM68V2000A and KM68U2000A families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
family support various operating temperature ranges and have
various package types for user flexibility of system design. The
family also support low data retention voltage for battery back-
up operation with low data retention current.
PIN DESCRIPTION
Name
Function
CS
1
,CS
2
Chip Select Input
OE
Output Enable Input
WE
Write Enable Input
A
0
~A
17
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C.
No Connection
PRODUCT FAMILY
1. The parameters are tested with 30pF test load
2. KM68V2000A Family = 35mA
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2,
Max)
KM68V2000AL-L
Commercial(0~70
°
C)
3.0~3.6V
70/85
10
μ
A
30mA
2)
32-TSOP1-0820F
32-TSOP1-0813.4F
KM68U2000AL-L
2.7~3.3V
70
1)
/100
KM68V2000ALI-L
Industrial(-40~85
°
C)
3.0~3.6V
70
1)
/100
15
μ
A
KM68U2000ALI-L
2.7~3.3V
70
1)
/100
FUNCTIONAL BLOCK DIAGRAM
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-sTSOP1
Type - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A2
Precharge circuit.
Memory array
1024 rows
256
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1 A17 A6 A5
A3
A4
A16
A15
A14
A13
A12
A11
A9
I/O
1
Data
cont
Data
cont
I/O
8
A10
A8
A7
CS
1
WE
OE
CS
2
Control
logic
32-TSOP1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V2000A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68U2000 | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68V2000 | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68U4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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