參數(shù)資料
型號(hào)： KM68U1000C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述： 128K的x8位低功耗和低電壓的CMOS靜態(tài)RAM（128K的× 8位低功耗和低電壓的CMOS靜態(tài)RAM）的
文件頁(yè)數(shù)： 2/11頁(yè)
文件大小： 195K
代理商： KM68U1000C
KM68V1000C, KM68U1000C Family
CMOS SRAM
Revision 2.0
November 1997
2
128K x8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
Process Technology: 0.4
μ
m CMOS
Organization: 128K x8
Power Supply Voltage:
KM68V1000C family: 3.0~3.6V
KM68U1000C family: 2.7~3.3V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-SOP-525, 32-TSOP1-0820F/R,
32-TSOP1-0813.4F/R
GENERAL DESCRIPTION
The KM68V1000C and KM68U1000C families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system design.
The families also supports low data retention voltage for battery
back-up operation with low data retention current.
Name
CS
1
,CS
2
OE
WE
A
0
~A
16
I/O
1
~I/O
8
Vcc
Vss
N.C
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
No Connection
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc
Range(V)
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM68V1000CL-L
KM68U1000CL-L
KM68V1000CLE-L
KM68U1000CLE-L
KM68V1000CLI-L
KM68U1000CLI-L
Commercial
(0~70
°
C)
Extended
(-25~85
°
C)
Industrial
(-40~85
°
C)
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
70/100
85/100
70/100
85/100
70/100
85/100
10
μ
A
35mA
32-SOP
32-TSOP1-F/R
32-sTSOP1-F/
R
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
32-TSOP
Type1-Reverse
A11
A9
A8
A13
A15
VNC
A16
A12
A7
A6
A5
A4
OE
CS1
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP
TSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
A11
A9
A8
A13
A15
VNC
A12
A7
A6
A5
A4
OE
CS1
I/O8
I/O7
I/O5
I/O4
VSS
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A10 A0
A1
A2
A3
A11
A9
I/O
1
Data
cont
I/O
8
V
CC
V
SS
A4
A5
A6
A7
A8
A12
A14
A13
A15
A16
CS1
WE
OE
Control
logic
CS2
32-
TSOP
相關(guān)PDF資料
PDF描述
KM68V1000C 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68U2000A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68V2000A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68U2000 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68V2000 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM68V1000B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68V1000BL 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68V1000BL/L-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68V1000BLE 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68V1000BLE/LE-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
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