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參數(shù)資料
| 型號： | KM64V1003B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態(tài) RAM) |
| 中文描述： | 256K × 4位（與OE）的高速CMOS靜態(tài)RAM（256K × 4位（帶OE）的高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | KM64V1003B |
KM64V1003B
CMOS SRAM
PPreliminary
Rev 2.0
- 1 -
February 1998
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev.1.0
Rev.2.0
Remark
Design Target
Preliminary
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Delete Industrial Temperature Range Part
2.5. Delete TSOP2 Package
2.6. Add Capacitive load of the test environment in A.C test load
2.7. Change D.C characteristics
Previous spec.
(8/10/12ns part)
I
CC
150/140/130mA
I
SB
30mA
Items
Changed spec.
(8/10/12ns part)
150/145/140mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Feb. 25th, 1998
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