參數(shù)資料
型號(hào): KM641001B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態(tài) RAM)
中文描述: 256K × 4位(與OE)的高速CMOS靜態(tài)RAM(256K × 4位(帶OE)的高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大?。?/td> 112K
代理商: KM641001B
KM641001B/BL
CMOS SRAM
PRELIMINARY
Rev. 3.0
July 1998
- 1 -
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.3.0
Remark
Design Target
Preliminary
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
1. Delete Preliminary.
2. Delete 17ns, L-version and Industrial Temperature Part.
3. Delete V
OH1
=3.95V.
4. Delete Data Retention Characteristics and Wave form.
5. Relex operating current
Speed
15ns
17ns
20ns
1. Add Low power Version.
2. Add Data Retenttion chcracteristics
Previous
120mA
110mA
100mA
Now
120mA
-
118mA
Draft Data
Feb. 1st 1997
Jun. 1st 1997
Feb. 6th 1998
Jul. 28th 1998
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