- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373160 > KM6264BLG-7L (SAMSUNG SEMICONDUCTOR CO. LTD.) 8Kx8 bit Low Power CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號： | KM6264BLG-7L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 8Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 152K |
| 代理商： | KM6264BLG-7L |
KM6264B Family
ELECTRONICS
CMOS SRAM
Revision. 0.0
Auust. 1996
7
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (1)
(Address Controlled)
(/CS=/OE=Vil, CS2=/WE=Vih)
Address
Data Out
t
RC
Previous Data Valid
Data Valid
t
AA
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(/WE= V
IH
)
t
RC
t
AA
t
CO1
t
OE
t
OLZ
t
OH
t
LZ
t
OHZ
Address
/CS1
/OE
Data out
Data Vailid
High - Z
Notes(Read Cycle)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not
referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max) is less than tLZ(Min) both for a given device and
device to device interconnection.
t
CO2
CS2
t
HZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM6264BLP-7 | 8Kx8 bit Low Power CMOS Static RAM |
| KM6264BLP-7L | 8Kx8 bit Low Power CMOS Static RAM |
| KM681000B | 128K x8 bit Low Power CMOS Static RAM(128K x8位低功耗 CMOS 靜態(tài) RAM) |
| KM681000C | 128K x8 bit Low Power CMOS Static RAM(128K x8位低功耗 CMOS 靜態(tài) RAM) |
| KM681001B-20 | 128K x 8 Bit High-Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6264BLGE-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Kx8 bit Low Power CMOS Static RAM |
| KM6264BLGE-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Kx8 bit Low Power CMOS Static RAM |
| KM6264BLGI-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Kx8 bit Low Power CMOS Static RAM |
| KM6264BLGI-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Kx8 bit Low Power CMOS Static RAM |
| KM6264BLP-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Kx8 bit Low Power CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。