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參數(shù)資料
| 型號(hào)： | KM6264BLG-7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 8Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | KM6264BLG-7 |
KM6264B Family
ELECTRONICS
CMOS SRAM
Revision. 0.0
Auust. 1996
4
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby
Current
(CMOS)
KM6264BL
KM6264BL-L
KM6264BLE
KM6264BLE-L
KM6264BLI
KM6264BLI-L
DC AND OPERATING CHARACTERISTICS
Symbol
Ili
Ilo
Icc
Icc1
Icc2
Vol
Voh
Isb
Isb1
Vin=Vss to Vcc
/CS1=Vih or CS2=Vil or /WE=Vil
Vi/o=Vss to Vcc
/CS1=Vil, CS2=Vih
Vin=Vil or Vih, Ii/o=0mA
Cycle time=1us, 100% duty
/CS1
0.2V, CS2
Vcc-0.2V
Min cycle, 100% duty
/CS1=Vil, CS2=Vih, Ii/o=0mA
Iol=2.1mA
Ioh= -1.0mA
/CS1=Vih or CS2=Vil
/CS1
Vcc-0.2V
CS2
Vcc-0.2V or
CS2
0.2V
Others 0~Vcc
Unit
uA
uA
mA
mA
mA
V
V
mA
uA
uA
uA
uA
uA
uA
Max
1
1
15
10
55
0.4
-
1
100
10
100
50
100
50
Typ**
-
-
7
-
-
-
-
-
2
1
-
-
-
-
Min
-1
-1
-
-
-
-
2.4
-
-
-
-
-
-
-
* 1) Commercial Product : Ta=0 to 70 ° C, Vcc=5V+/-10%, unless otherwise specified
2) Extended Product : Ta=-25 to 85 ° C, Vcc=5V+/-10%, unless otherwise specified
3) Industrial Product : Ta=-40 to 85 ° C, Vcc=5V+/-10%, unless otherwise specified
** Ta=25 ° C
L
LL
L
LL
L
LL
Item
Test Conditions*
Input pulse level
Input rise fall time
Input and output reference voltage
Output load(See right)
TEST CONDITIONS
(
1. Test Load and Test Input/Output Reference)
*
0.8 to 2.4V
5ns
1.5V
C
L
=100pF+1TTL
-
-
-
-
C
L
*
* Including scope and jig capacitance
* See test condition of DC and AC Operating characteristics
Item
Value
Remark
A.C CHARACTERISTICS
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