參數(shù)資料
型號(hào): KM62256CLTGI-10L
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32Kx8 bit Low Power CMOS Static RAM
中文描述: 32Kx8位低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 162K
代理商: KM62256CLTGI-10L
PRELIMINARY
CMOS SRAM
Revision 3.0
April 1996
KM62256C Family
DATA RETENTION CHARACTERISTICS
* 1) Commercial Product : Ta=0 to 70
é
, unless otherwise specified
2) Extended Product : T
A
=-25 to 85
é
, nless otherwise specified
3) Industrial Product : Ta=-40 to 85
é
, unless otherwise specified
** T
A
=25
é
Item
Symbol
Test Condition*
Min
Typ**
Max
Unit
Vcc for data retention
V
DR
CS
Vcc-0.2V
2.0
-
5.5
V
Data retention current
I
DR
KM62256CL
KM62256CL-L
Vcc=3.0V
CS
Vcc-0.2V
L-Ver
LL-Ver
-
-
1
0.5
50
10
§
KM62256CLE
KM62256CLE-L
L-Ver
LL-Ver
-
-
-
-
50
25
KM62256CLI
KM62256CLI-L
L-Ver
LL-Ver
-
-
-
-
50
25
Data retention set-up time
t
SDR
t
RDR
See data retention
waveform
0
-
-
ms
Recovery time
5
-
-
DATA RETENTION WAVE FORM
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
1) CS Controlled
FUNCTIONAL DESCRIPTION
* X means don't care
CS
WE
OE
Mode
I/O Pin
Current Mode
H
X
X
Power Down
High-Z
I
SB
I
SB1
L
H
H
Output Disable
High-Z
I
CC
L
H
L
Read
Dout
I
CC
L
L
X
Write
Din
I
CC
t
SDR
t
RDR
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