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參數(shù)資料
| 型號(hào)： | KM6164000BLR-7L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | KM6164000BLR-7L |
KM6164000B Family
CMOS SRAM
Revision 4.01
June 1998
1
Document Title
256Kx16 bit Low Power CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
0.1
1.0
2.0
3.0
4.0
4.01
Remark
Advance
Preliminary
Final
Final
Final
Final
History
Initial draft
Revise
- Die name change ; A to B
Finalize
Revise
- Operating current update and release.
I
CC
(Read/Write) = 30/60
→
15/75mA
I
CC1
(Read/Write) = 30/60
→
15/75mA
I
CC2
= 160
→
130mA
Revise
- Change datasheet format
- Remove I
CC
write value from table.
Revise
- Change test load at 55ns: 100pF
→
50pF
Errarta correction
Draft Data
June 28, 1996
September 19, 1996
December 17, 1996
February 17, 1997
February 17, 1998
June 22, 1998
August 8, 1998
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| KM6164000BLRI-10L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
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