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參數資料
| 型號： | KM48V2004C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out(2M x 8位CMOS 動態(tài)RAM(帶擴展數據輸出)) |
| 中文描述： | 200萬× 8位的擴展數據輸出的CMOS動態(tài)RAM（2米× 8位的CMOS動態(tài)隨機存儲器（帶擴展數據輸出）） |
| 文件頁數： | 4/21頁 |
| 文件大?。?/td> | 367K |
| 代理商： | KM48V2004C |
KM48C2004C, KM48C2104C
KM48V2004C, KM48V2104C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 62.5us(2K/L-ver),
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ7=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM48V2004C
KM48V2104C
KM48C2004C
KM48C2104C
I
CC1
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
2
1
2
1
I
CC3
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
I
CC4
Don
′
t care
-5
-6
80
70
90
80
80
70
90
80
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
1
250
1
250
I
CC6
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
250
200
250
200
300
250
300
250
相關PDF資料 |
PDF描述 |
|---|---|
| KM48C2004C | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out(2M x 8位CMOS 動態(tài)RAM(帶擴展數據輸出)) |
| KM48C2104C | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out(2M x 8位CMOS 動態(tài)RAM(帶擴展數據輸出)) |
| KM48V2104C | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out(2M x 8位CMOS 動態(tài)RAM(帶擴展數據輸出)) |
| KM48V8004B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48V8104B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM48V2100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2104CS-L6 | 制造商:Samsung Semiconductor 功能描述: |
| KM48V8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48V8004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48V8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
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