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參數(shù)資料
| 型號： | KM48V2000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 200萬× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | KM48V2000B |
KM48C2000B, KM48C2100B
KM48V2000B, KM48V2100B
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
0
ns
8
Data hold time
10
10
15
ns
8
Refresh period (2K, Normal)
32
32
32
ms
Refresh period (4K, Normal)
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
6
CAS to W delay time
36
40
50
ns
6
RAS to W delay time
73
85
100
ns
6
Column address to W delay time
48
55
65
ns
6
CAS precharge to W delay time
53
60
70
ns
6
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hlod time (CAS -before-RAS refresh)
10
10
15
ns
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (CBR counter test
20
20
30
ns
Access time from CAS precharge
30
35
40
ns
3
Fast Page mode cycle time
35
40
45
ns
Fast Page read-modify-write cycle time
76
85
100
ns
CAS precharge time (Fast Page cycle)
10
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
13
15
20
ns
OE to data delay
13
15
20
ns
Output buffer turn off delay time from OE
0
13
0
15
0
20
ns
5
OE command hold time
13
15
20
ns
Write command set-up time (Test mode in)
10
10
10
ns
10
Write command hold time (Test mode in)
10
10
10
ns
10
W to RAS precharge time(C-B-R refresh)
10
10
10
ns
W to RAS hold time(C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
12
RAS precharge time (C-B-R self refresh)
90
110
130
ns
12
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM48V2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C2100C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48V2000C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48C2000C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48V2100C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM48V2100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2104CS-L6 | 制造商:Samsung Semiconductor 功能描述: |
| KM48V8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48V8004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48V8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
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