參數(shù)資料
型號(hào): KM48S16030
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 8Bit x 4 Banks Synchronous DRAM
中文描述: 4米× 8位× 4銀行同步DRAM
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 116K
代理商: KM48S16030
KM48S16030
CMOS SDRAM
REV. 2 Mar. '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
t
RC
(min)
I
OL
= 0 mA
120
110
110
105
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 15ns
CKE & CLK
V
IL
(max), t
CC
=
1
mA
I
CC2
PS
1
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
V
IH
(min),CS
V
IH
(min),t
CC
=15ns
Input signals are changed one time during
30ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
15
mA
I
CC2
NS
7
Active Standby Current
in power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 15ns
CKE & CLK
V
IL
(max), t
CC
=
5
mA
I
CC3
PS
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during
30ns.
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
30
mA
I
CC3
NS
20
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA
Page Burst
t
CCD
= 2CLKs
3
150
125
125
125
mA
1
2
115
125
115
115
Refresh Current
I
CC5
t
RC
t
RC
(min)
200
165
mA
2
Self Refresh Current
I
CC6
CKE
0.2V
1
mA
3
600
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM48S16030T-G**
4. KM48S16030T-F**
Note :
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