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參數(shù)資料
| 型號： | KM48C8004B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 8米× 8位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大小： | 383K |
| 代理商： | KM48C8004B |
KM48C8004B,
KM48C8104B
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns which is measured at V
CC
*2 : -2.0 at pulse width
≤
20ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
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