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參數(shù)資料
| 型號： | KM44C4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 4米× 4位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 340K |
| 代理商： | KM44C4000C |
KM44C4000C, KM44C4100C
KM44V4000C, KM44V4100C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
90
110
ns
Read-modify-write cycle time
133
155
ns
Access time from RAS
50
60
ns
3,4,10
Access time from CAS
13
15
ns
3,4,5
Access time from column address
25
30
ns
3,10
CAS to output in Low-Z
0
0
ns
3
Output buffer turn-off delay
0
13
0
15
ns
6
Transition time (rise and fall)
3
50
3
50
ns
2
RAS precharge time
30
40
ns
RAS pulse width
50
10K
60
10K
ns
RAS hold time
13
15
ns
CAS hold time
50
60
ns
CAS pulse width
13
10K
15
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
20
37
20
45
ns
4
RAS to column address delay time
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
ns
Row address set-up time
0
0
ns
Row address hold time
10
10
ns
Column address set-up time
0
0
ns
Column address hold time
10
10
ns
Column address to RAS lead time
25
30
ns
Read command set-up time
0
0
ns
Read command hold time referenced to CAS
0
0
ns
8
Read command hold time referenced to RAS
0
0
ns
8
Write command hold time
10
10
ns
Write command pulse width
t
WP
t
RWL
t
CWL
10
10
ns
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
13
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44C4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V4000C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44S16020B | 8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4位 x 2組同步動態(tài)RAM) |
| KM44S4020CT | 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C4000CK-6 | 制造商:Samsung Semiconductor 功能描述: |
| KM44C4000T-07 | 制造商:Samsung Semiconductor 功能描述: |
| KM44C4003C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
| KM44C4003CS-6 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip FPM 16M-Bit 4Mx4 5V 28-Pin TSOP-II |
| KM44C4004CS6 | 制造商:SAMSUNG 功能描述:* |
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