參數(shù)資料
型號: KM416V4100B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動態(tài)RAM(帶快速頁模式))
中文描述: 4米× 16位的快速頁面模式的CMOS動態(tài)RAM(4米× 16位的CMOS動態(tài)隨機存儲器(帶快速頁模式))
文件頁數(shù): 2/35頁
文件大?。?/td> 753K
代理商: KM416V4100B
KM416V4000B,
KM416V4100B
CMOS DRAM
PIN CONFIGURATION
(Top Views)
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
N.C
V
CC
W
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
V
CC
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
N.C
V
SS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
Pin Name
Pin function
A0 - A12
Address Inputs(8K Product)
A0 - A11
Address Inputs(4K Product)
DQ0 - 15
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+3.3V)
N.C
No Connection
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
KM416V40(1)00BS
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