參數(shù)資料
型號(hào)： KM416V1200C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
中文描述： 100萬(wàn)× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁(yè)面模式
文件頁(yè)數(shù)： 8/34頁(yè)
文件大?。?/td> 767K
代理商： KM416V1200C
KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge
.
t
CSR
is referenced to the earlier CAS falling edge before RAS transition low.
t
CHR
is referenced to the later CAS rising edge after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
16.
15.
14.
13.
t
DS,
t
DH
is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)
If
t
RASS
≥
100us, then RAS precharge time must use
t
RPS
instead of
t
RP
.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
17.
18.
19.
20.
相關(guān)PDF資料
PDF描述
KM416C1204C-6 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416V12CT-L6 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-45 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-5 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-6 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416V1200CT6 制造商:Samsung Semiconductor 功能描述:
KM416V1204BJ 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
KM416V1204C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416V1204C-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416V1204C-5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
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