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參數(shù)資料
| 型號： | KM416S4030CT-G |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 100萬× 16 × 4銀行同步DRAM |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 124K |
| 代理商： | KM416S4030CT-G |
KM416S4030C
REV. 2 June '98
CMOS SDRAM
Preliminary
Revision History
Revision 1 (May 1998)
- I
CC2
N value (10mA) is changed to 12mA.
Revision .2 (June 1998)
- t
SH
(-10 binning) is revised.
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相關代理商/技術參數(shù) |
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|---|---|
| KM416S8030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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