參數(shù)資料
型號(hào)： KM416RD4C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述： 直接Rambus公司的DRAM（動(dòng)態(tài)內(nèi)存直接Rambus公司）
文件頁數(shù)： 55/59頁
文件大?。?/td> 4654K
代理商： KM416RD4C
Page 56
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
Absolute Maximum Ratings
I
DD
- Supply Current Profile
Table 23 : Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V
I,ABS
Voltage applied to any RSL or CMOS pin with respect to Gnd
- 0.3
V
DD
+0.3
V
V
DD,ABS
, V
DDA,ABS
Voltage on VDD and VDDA with respect to Gnd
- 0.5
V
DD
+1.0
V
T
STORE
Storage temperature
- 50
100
°
C
Table 24 : Supply Current Profile
I
DD
value
RDRAM blocks consuming power @ t
CYCLE
=2.5ns
Min
Max
Unit
I
DD,PDN
Self-refresh only for INIT.LSR=0
TBD
1500
μ
A
I
DD,PDN,L
Self-refresh only for INIT.LSR= 1
TBD
300
μ
A
I
DD,NAP
Refresh, T/RCLK-Nap
TBD
TBD
mA
I
DD,STBY
Refresh, T/RCLK, ROW-demux
TBD
TBD
mA
I
DD,ATTN
Refresh, T/RCLK, ROW-demux, COL-demux
TBD
TBD
mA
I
DD,ATTN-W
Refresh,T/RCLK, ROW-demux,COL-demux,DQ-demux,1WR-SenseAmp,4ACT-Bank
TBD
TBD
mA
I
DD,ATTN-R
Refresh,T/RCLK, ROW-demux,COL-demux,DQ-mux,1RD-SenseAmp,4ACT-Bank
a
TBD
TBD
mA
I
DD
value
RDRAM blocks consuming power @ t
CYCLE
=3.3ns
Min
Max
Unit
I
DD,PDN
Self-refresh only for INIT.LSR=0
TBD
1500
μ
A
I
DD,PDN,L
Self-refresh only for INIT.LSR= 1
TBD
300
μ
A
I
DD,NAP
Refresh, T/RCLK-Nap
TBD
TBD
mA
I
DD,STBY
Refresh, T/RCLK, ROW-demux
TBD
TBD
mA
I
DD,ATTN
Refresh, T/RCLK, ROW-demux, COL-demux
TBD
TBD
mA
I
DD,ATTN-W
Refresh,T/RCLK, ROW-demux,COL-demux,DQ-demux,1WR-SenseAmp,4ACT-Bank
TBD
TBD
mA
I
DD,ATTN-R
Refresh,T/RCLK, ROW-demux,COL-demux,DQ-mux,1RD-SenseAmp,4ACT-Bank
a
TBD
TBD
mA
a.This does not include the I
OL
sink current. The RDRAM dissipates I
OL
V
OL
in each output driver when a logic one is driven.
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參數(shù)描述
KM416RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(DB)-RCG60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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