參數(shù)資料
型號(hào): KM416C4104C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述: 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出
文件頁(yè)數(shù): 5/36頁(yè)
文件大?。?/td> 946K
代理商: KM416C4104C
KM416C4004C,
KM416C4104C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5.0V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, See note 1,2)
Test condition : V
CC
=5.0V
±
10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
84
104
ns
Read-modify-write cycle time
116
138
ns
Access time from RAS
50
60
ns
3,4,10
Access time from CAS
13
15
ns
3,4,5
Access time from column address
25
30
ns
3,10
CAS to output in Low-Z
3
3
ns
3
Output buffer turn-off delay from CAS
3
13
3
13
ns
6,21
OE to output in Low-Z
3
3
ns
3
Transition time (rise and fall)
1
50
1
50
ns
2
RAS precharge time
30
40
ns
RAS pulse width
50
10K
60
10K
ns
RAS hold time
13
15
ns
CAS hold time
38
45
ns
CAS pulse width
8
10K
10
10K
ns
RAS to CAS delay time
20
37
20
45
ns
4
RAS to column address delay time
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
ns
Row address set-up time
0
0
ns
Row address hold time
10
10
ns
Column address set-up time
0
0
ns
Column address hold time
8
10
ns
13
Column address to RAS lead time
25
30
ns
13
Read command set-up time
0
0
ns
Read command hold time referenced to CAS
0
0
ns
8
Read command hold time referenced to RAS
0
0
ns
8
Write command hold time
10
10
ns
Write command pulse width
10
10
ns
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
8
10
ns
16
Data set-up time
0
0
ns
9,19
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