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參數資料
| 型號： | KM416C1204C-L6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的擴展數據輸出 |
| 文件頁數： | 4/35頁 |
| 文件大小： | 494K |
| 代理商： | KM416C1204C-L6 |
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KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver)
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V1004C
100
90
80
1
1
100
90
80
110
100
90
0.5
200
100
90
80
300
150
KM416V1204C
150
140
130
1
1
150
140
130
110
100
90
0.5
200
150
140
130
200
150
KM416C1004C
100
90
80
2
1
100
90
80
110
100
90
1
200
110
90
80
350
200
KM416C1204C
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
I
CC1
Don
′
t care
-45
-5
-6
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
I
CC3
Don
′
t care
-45
-5
-6
-45
-5
-6
I
CC4
Don
′
t care
I
CC5
Normal
L
Don
′
t care
I
CC6
Don
′
t care
-45
-5
-6
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
相關PDF資料 |
PDF描述 |
|---|---|
| KM416C12CJ-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CJ-L5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CJ-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CT-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CT-L5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM416C1204CT-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, EDO, 1M x 16, 50 Pin, Plastic, TSOP 制造商:SEC 功能描述:Dynamic RAM, EDO, 1M x 16, 50 Pin, Plastic, TSOP |
| KM416C1204CT-L6 | 制造商:Samsung SDI 功能描述:DRAM Chip EDO 16M-Bit 1Mx16 5V 44-Pin TSOP-II |
| KM416C12CJ-L45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CJ-L5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C12CJ-L6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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