參數(shù)資料
型號: KM23V4000D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM)
中文描述: 4分位(512Kx8)的CMOS掩模ROM(4分位(512Kx8)的CMOS掩膜光盤)
文件頁數(shù): 3/4頁
文件大?。?/td> 74K
代理商: KM23V4000D
KM23V4000D(G)
CMOS MASK ROM
TEST CONDITIONS
Item
Value
Input Pulse Levels
0.45V to 2.4V
Input Rise and Fall Times
10ns
Input and Output timing Levels
1.5V
Output Loads
1 TTL Gate and C
L
=100pF
AC CHARACTERISTICS
(T
A
=0
°
C to+70
°
C, V
CC
=3.3V/3.0V
±
0.3V, unless otherwise noted.)
READ CYCLE
Item
Symbol
V
CC
=3.3V
±
0.3V
V
CC
=3.0V
±
0.3V
Unit
Min
Max
Min
Max
Read Cycle Time
t
RC
100
120
ns
Chip Enable Access Time
t
ACE
100
120
ns
Address Access Time
t
AA
100
120
ns
Output Enable Access Time
t
OE
50
60
ns
Output or Chip Disable to
Output High-Z
t
DF
20
20
ns
Output Hold from Address Change
t
OH
0
0
ns
TIMING DIAGRAM
READ
ADD
CE
OE
D
OUT
ADD1
ADD2
VALID DATA
VALID DATA
t
OH
t
DF(Note)
t
RC
t
ACE
t
OE
t
AA
NOTE :
t
DF
is defined as the time at which the outputs achieve the open circuit condition and is not referenced to V
OH
or V
OL
level.
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