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參數(shù)資料
| 型號： | KM23C8000DG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8) CMOS Mask ROM(8M位(1Mx8) CMOS掩膜ROM) |
| 中文描述： | 800萬位（1Mx8）的CMOS掩模ROM（800萬位（1Mx8）的CMOS掩膜光盤） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | KM23C8000DG |
KM23C8000D(G)
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to th
e
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extend
ed periods may
affect device reliability.
Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN
-0.3 to +7.0
V
Temperature Under Bias
TBIAS
-10 to +85
°C
Storage Temperature
TSTG
-55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (Voltage reference to VSS, TA=0 to 70
°C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
0
V
MODE SELECTION
CE
OE
Mode
Data
Power
H
X
Standby
High-Z
Standby
L
H
Operating
High-Z
Active
L
Operating
Dout
Active
CAPACITANCE(TA=25
°C, f=1.0MHz)
NOTE : Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Output Capacitance
COUT
VOUT=0V
-
12
pF
Input Capacitance
CIN
VIN=0V
-
12
pF
DC CHARACTERISTICS
NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Operating Current
ICC
CE=OE=VIL, all outputs open
-
50
mA
Standby Current(TTL)
ISB1
CE=VIH, all outputs open
-
1
mA
Standby Current(CMOS)
ISB2
CE=VCC, all outputs open
-
50
A
Input Leakage Current
ILI
VIN=0 to VCC
-
10
A
Output Leakage Current
ILO
VOUT=0 to VCC
-
10
A
Input High Voltage, All Inputs
VIH
2.2
VCC+0.3
V
Input Low Voltage, All Inputs
VIL
-0.3
0.8
V
Output High Voltage Level
VOH
IOH=-400
A
2.4
-
V
Output Low Voltage Level
VOL
IOL=2.1mA
-
0.4
V
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