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參數(shù)資料
| 型號： | KM110B |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Magnetic field sensor |
| 中文描述： | 磁場傳感器 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 30K |
| 代理商： | KM110B |
November 1994
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
Notes to the characteristics
1.
Magnet (Ferroxdure 100) delivers an auxiliary field of
H
x
= 3.6 kA/m (temperature coefficient:
0.2 %/K).
Above 110
°
C the auxiliary field H
x
will be <3.0 kA/m;
stable sensor operation may be threatened by
disturbing magnetic fields.
2.
.
3.
The sensitivity increases and decreases linear with the
supply voltage, thus the static output voltage is directly
proportional to the supply voltage.
Sensor bridge response only. When sensing high
speed rotation, the operating frequency may be
reduced due to eddy current effects.
4.
S
V
at H
-------------------------------------------------------------------------V
1.6 kA/m
1.6
O
at H
y
0
=
)
V
CC
×
=
M = direction of magnetization.
N, S = magnetic poles.
Fig.3 Principle of magnetization.
handbook, halfpage
MBD882
4
3
2
1
Hy
Hx
M
N
S
S
T
amb
= 25
°
C; V
offset
= 0.
Fig.4 Sensor output characteristic.
handbook, halfpage
V
(mV/V)
–2
–1
0
2
4
–4
–8
0
MBD885
1
Hy(kA/m)
O
Fig.5 Power derating curve.
handbook, halfpage
tot
50
100
0
100
MBD892
150
75
50
25
o
( C)
(mW)
200
Tamb
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相關代理商/技術參數(shù) |
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| KM110B/2 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Magnetic field sensor |
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| KM1-1240 | 制造商:Kingstate Electronics Corporation 功能描述:PIEZO ALARM SMD |
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