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參數資料
| 型號： | KLNA3S.01R |
| 廠商： | Conexant Systems, Inc. |
| 英文描述： | Ka Band Low Noise Amplifier(工作頻率從26GHz到30GHz的低噪聲Ka波段功率放大器) |
| 中文描述： | Ka波段低噪聲放大器（工作頻率從26GHz到30GHz的的低噪聲家波段功率放大器） |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 144K |
| 代理商： | KLNA3S.01R |
Ka Band Low Noise Amplifier
07/08/99
2
Klna3s.1rl
RF and Electrical Specifications
Conditions T base = 25
°
C, Z source = Z load 50 +/- 5
Symbol
Parameters/Conditions
Min
Typ
Max
Units
V
d
1 2 3
Drain Supply Voltage
2.5
3
5
Volts
V
g
1 2 3
Gate Supply Voltage
-0.6
-0.2
0.0
Volts
ID total
Total drain current (@ typ Vgs)
20
50
80
mA
Frequency
Specified Bandwidth edges
26
30
GHz
Gain**
Small signal
24
26
dB
Gain
Small signal gain flatness
1
dB/GHz
P1dB(note 1)
Power output at 1dB gain compression
8
10
dBm
RL in
Input port return loss
8
10
dB
RL out
Output port return loss
8
10
dB
Isolation
Reverse isolation
30
40
dB
NF(note 1)
Noise figure
2.2
2.8
dB
(Note 1)
These measurements will be carried out on a sampled basis. A random representative sample of dies is
mounted and tested for noise figure and 1 dB gain compression.
(***)
Rockwell Science Center reserves the right to make improvements in this device,
including die size reduction, while maintaining all RF & DC specifications. The
General Notes on Rockwell PHEMT Products will be supplied upon user’s request .
In addition to inspection criteria it will contain descriptions, biasing instructions,
reliability data.
(**)
Within the temperature range -35
°
C to +85
°
C, Small Signal Gain shall not vary by
more than +/- 2.0 dB and shall remain within the range 21 dB to 27.5 dB . Under the
same conditions the Noise Figure shall not exceed 3.2 dB.
Each die is fully DC tested and RF S-parameters are measured. Full 2-port S-parameter data on
individual die will be supplied.
All dies will pass visual inspection as dictated by the rules contained in Section A of the General
Notes on Rockwell PHEMT Products (applicable sections of MIL-I-45208)
Every die has a unique identifier number on-chip for complete traceability.
A conductive epoxy or a flux-less solder die attach is recommended. The die should be attached to an
electrically conductive surface to complete DC and RF ground paths. The ground path inductance
should be minimized (<10 pH) to assure stability.
The front side metal is compatible with thermo-sonic 1 mil wire bonding. The backside metal is
compatible with die attach methods not exceeding Tmax .
GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices.
Front and backside metal is Gold.
In the event of performance verification, dies will be mounted and tested in a standard Rockwell
approved test fixture for Ka band. (See Section B of the General Notes on Rockwell PHEMT Products).
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