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參數(shù)資料
| 型號(hào)： | KGF2236 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Dual Monolithic GaAs Power FET(雙路單片砷化稼功率場(chǎng)效應(yīng)管) |
| 中文描述： | 雙單片GaAs功率場(chǎng)效應(yīng)管（雙路單片砷化稼功率場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 135K |
| 代理商： | KGF2236 |
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KGF2236
electronic components
KGF2236
This version: Jul. 1998
Previous version:
—
E2Q0056-18-73
Dual Monolithic GaAs Power FET
GENERAL DESCRIPTION
The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
features high efficiency at 3 V. Since the KGF2236 is made up of Driver FET and Power FET, that
is good to develop smaller and lighter. The KGF2236 specifications are guaranteed to fixed
matching circuit of 3.5 V and 835 MHz; external impedance-matching circuit are also required.
The KGF2236 provides high efficiency 60% (typical) with a 31.5 dBm (min. @Pin=7 dBm) output
at 3.5 V. The device is optimized for transmitter-final-stage amplifiers in Portable Handy Phones
(PHPs) and other 3 V analog cellular phone.
FEATURES
Dual monolithic GaAs Power FET
High efficiency: 60% (typ.)
High gain: 25 dB
Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz
Package: 16PSSOP
PACKAGE DIMENSIONS
(2.6)
(
0.25±0.1
0.22±0.1
9
0.65±0.1
16
1
8
5.5±0.12
(4.55)
1.1
(3.0)
6
5
0
(Unit: mm)
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