參數(shù)資料
    型號： KFH1G16Q2M-DEB
    廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述： FLASH MEMORY
    中文描述： 閃存
    文件頁數(shù)： 65/93頁
    文件大小： 1219K
    代理商： KFH1G16Q2M-DEB
    OneNAND512/OneNAND1GDDP
    FLASH MEMORY
    65
    Error in write or load operation
    Within its life time, additional invalid blocks may develop with the device. Refer to the qualification report for the actual data.The fol-
    lowing possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
    erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
    the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
    reprogramming the current target data and copying the rest of the replaced block.
    Failure Mode
    Detection and Countermeasure sequence
    Write
    Erase Failure
    Status Read after Erase --> Block Replacement
    Program Failure
    Status Read after Program --> Block Replacement
    Load
    Single Bit Failure
    Error Correction by ECC mode of the device
    Block Replacement
    When an error happens in the nth page of the Block ’A’ during program operation.
    * Step1
    Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’ via data buffer0.
    * Step2
    Copy the nth page data of the Block ’A’ in the data buffer1 to the nth page of another free block. (Block ’B’)
    Do not further erase or program Block ’A’ but create an ’invalid Block’ table or other appropriate scheme.
    Data Buffer1 of the device
    (assuming maintain the nth page data)
    1st
    Block A
    Block B
    (n-1)th
    nth
    (page)
    {
    1st
    ～
    (n-1)th
    nth
    (page)
    {
    an error occurs.
    1
    2
    Data Buffer0 of the device
    1
    Technical Notes
    (Continued)
    相關(guān)PDF資料
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    KFH1G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
    KFH1G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
    KFH1G16Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
    KFH1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
    KFH1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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