參數(shù)資料
型號： KFG1G16U2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 65/125頁
文件大?。?/td> 1657K
代理商： KFG1G16U2M-DEB6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
65
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
The buffer memory can be read by addressing a Read to the desired buffer area.
3.1.2 Writing Data to Buffer
The buffer memory can be written to by addressing a Write to a desired buffer area.
3.1.3 Reset OneNAND Command
The Reset command is given by writing 00F0h to the boot partition address. Reset will return all default values into the device.
3.1.4 Load Data Into Buffer Command
Load Data into Buffer command is a two-cycle command. Two sequential designated command activates this operation. Sequentially
writing 00E0h and 0000h to the boot partition [0000h~01FFh, 8000h~800Fh] will load one page to DataRAM0. This operation refers
to FBA and FPA. FSA, BSA, and BSC are not considered.
At the end of this operation, FPA will be automatically increased by 1. So continuous issue of this command will sequentially load data
in next page to DataRAM0. This page address increment is restricted within a block.
The default value of FBA and FPA is 0. Therefore, initial issue of this command after power on will load the first page of memory,
which is usually boot code.
3.1.5 Read Identification Data Command
The Read Identification Data command consists of two cycles. It gives out the devices identification data according to the given
address. The first cycle is 0090h to the boot partition address and second cycle is read from the addresses specified in Identification
Data Description Table.
Identification Data Description
Note 1) To read the write protection status, FBA has to be set before issuing this command.
Address
Data Out
0000h
Manufacturer ID : 00ECh
0001h
Device ID : refer to chapter 2.8.3
0002h
Current Block Write Protection Status
1)
3.1.1 Reading Data From Buffer
相關(guān)PDF資料
PDF描述
KFH1G16U2M-DEB6 FLASH MEMORY(54MHz)
KFG2G16U2M-DEB6 FLASH MEMORY(54MHz)
KFH2G16U2M-DEB6 FLASH MEMORY(54MHz)
KFG4G16U2M-DEB6 FLASH MEMORY(54MHz)
KFH4G16U2M-DEB6 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1G16U2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16U2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16U2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16U2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16U2M-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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