參數(shù)資料
型號: KFG1G16Q2M-DID
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 44/125頁
文件大?。?/td> 1632K
代理商: KFG1G16Q2M-DID
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
44
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
This register is reserved for manufacturer
2.8.5 Data Buffer Size Register F003h (R)
This Read register describes the size of the Data Buffer.
F003h, default = 0800h
15
14
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12
11
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9
8
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6
5
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3
2
1
0
DataBufSize
Data Buffer Size Information
Version Identification
Description
DataBufSize
Total data buffer size in Words equal to 2 buffers of 1024 Words each
(2 x 1024 = 2
11
) in the memory interface
2.8.6 Boot Buffer Size Register F004h (R)
This Read register describes the size of the Boot Buffer.
F004h, default = 0200h
15
14
13
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2
1
0
BootBufSize
Register Information
Description
BootBufSize
Total boot buffer size in Words equal to 1 buffer of 512 Words
(1 x 512 = 2
9
) in the memory interface
2.8.4 Version ID Register F002h
相關(guān)PDF資料
PDF描述
KFG2816D1M-PID OneNAND SPECIFICATION
KFG2816U1M-DEB OneNAND SPECIFICATION
KFG2816U1M-DED OneNAND SPECIFICATION
KFG2816U1M-DIB OneNAND SPECIFICATION
KFG2816U1M-DID OneNAND SPECIFICATION
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