參數(shù)資料
型號: KFG1G16D2M-DID6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 73/93頁
文件大?。?/td> 1219K
代理商: KFG1G16D2M-DID6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
73
t
I
Rp(ohm)
Ibusy
tr[us]
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.089
tf[ns]
0.7727
1.345
1.788
3.77
3.77
3.77
3.77
1.75
0.18
0.09
40K
50K
2.142
2.431
3.77
3.77
0.045
0.06
0.036
Open(100K)
5.420
0.000
Busy State
Ready Vcc
VOH
tf
tr
VOL
Vss
~50k ohm
INT
Internal Vcc
Rp
INT pol = ’High’
Determing Rp Value
Because the pull-up resistor value is related to tr(INT), an appropriate value can be obtained by the following reference charts.
Technical Notes
(Continued)
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