- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373130 > KFG1216D2M-DIB (SAMSUNG SEMICONDUCTOR CO. LTD.) FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | KFG1216D2M-DIB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 65/93頁(yè) |
| 文件大小： | 1219K |
| 代理商： | KFG1216D2M-DIB |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)當(dāng)前第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)
OneNAND512/OneNAND1GDDP
FLASH MEMORY
65
Error in write or load operation
Within its life time, additional invalid blocks may develop with the device. Refer to the qualification report for the actual data.The fol-
lowing possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
reprogramming the current target data and copying the rest of the replaced block.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Load
Single Bit Failure
Error Correction by ECC mode of the device
Block Replacement
When an error happens in the nth page of the Block ’A’ during program operation.
* Step1
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’ via data buffer0.
* Step2
Copy the nth page data of the Block ’A’ in the data buffer1 to the nth page of another free block. (Block ’B’)
Do not further erase or program Block ’A’ but create an ’invalid Block’ table or other appropriate scheme.
Data Buffer1 of the device
(assuming maintain the nth page data)
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
～
(n-1)th
nth
(page)
{
an error occurs.
1
2
Data Buffer0 of the device
1
Technical Notes
(Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG1216D2M-DID | FLASH MEMORY |
| KFG1216Q2M-DED | FLASH MEMORY |
| KFG1216Q2M-DIB | FLASH MEMORY |
| KFG1216Q2M-DID | FLASH MEMORY |
| KFG1G16D2M-DEB | RSM, TKF 15K 1/16W 5% 040 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG1216D2M-DID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216Q2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216Q2A-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216Q2A-DEB5(6)000 | 制造商:Samsung 功能描述:KFG1216Q2A-DEB5(6)000 - Trays |
| KFG1216Q2A-DEB5000 | 制造商:Samsung Semiconductor 功能描述:512 DE-MUXED SLC W/ X16 FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。