參數(shù)資料
型號(hào): KFG1216D2A-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 100/114頁
文件大小: 1382K
代理商: KFG1216D2A-DEB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
100
NOTES:
1. AA = Address of address register
CA = Address of command register
LCD = Load Command
LMA = Address of memory to be loaded
BA = Address of BufferRAM to load the data
BD = Program Data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Load Command Sequence
A0:A15
WE
CE
CLK
t
DS
t
DH
t
CH
t
WPL
t
CS
t
WPH
t
WC
CA
BA
BA
LCD
LMA
AA
DQ0-DQ15
OE
Read Data
V
IL
Da
Da+1
t
AH
t
AWES
INT
t
RD
t
CH
t
CS
6.8 Load Operation Timing
See AC Characteristics Tables 5.7 and 5.8
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